DocumentCode :
3559725
Title :
Hydrogen Sensor Made of Porous Silicon and Covered by TiO _{2-{\\rm x}} or ZnO \\langle Al
Author :
Aroutiounian, Vladimir ; Arakelyan, Valeri ; Galstyan, Vardan ; Martirosyan, Khachatur ; Soukiassian, Patrick
Author_Institution :
Dept. of Phys. of Semicond. & Microelectron., Yerevan State Univ., Yerevan
Volume :
9
Issue :
1
fYear :
2009
Firstpage :
9
Lastpage :
12
Abstract :
Hydrogen sensor working at room and 40degC temperatures made of porous silicon covered by the TiO2-x or ZnO(Al) thin film was realized. Porous silicon layer was formed by electrochemical anodization on a p- and n-type Si surface. Thereafter, n-type TiO2-x and ZnO(Al) thin films were deposited onto the porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. Platinum catalytic layer and Au electric contacts were for further measurements deposited onto obtained structures by ion-beam sputtering. The sensitivity of manufactured structures to 1000-5000 ppm of hydrogen, propane-butane mixture, and humidity was studied. Sensitivity of obtained structures was determined as ratio of the resistivity of structures in the presence of investigated gas to that in air. Results of sensitivity measurements showed that it is possible to realize a hydrogen nanosensor, resistivity of which can be decreased up to 2.5 times at room temperature and four times at 40degC for the Pt/TiO2-x/PS structure, as well as two times for the Pt/ZnO(Al)/PS structure at 40degC at 5000 ppm hydrogen concentration, respectively. Both structures have the recovery and response time of approximately 20 s and rather high durability and selectivity to hydrogen gas.
Keywords :
aluminium compounds; anodisation; electron beam deposition; gas sensors; hydrogen; nanosensors; platinum; porous semiconductors; silicon; sputtered coatings; thin film sensors; titanium compounds; zinc compounds; H2; Pt-TiO2-x-Si; Pt-ZnO(Al)-Si; electrochemical anodization; electron-beam evaporation; gold electric contacts; humidity; hydrogen sensor; ion-beam sputtering; magnetron sputtering; nanosensor; platinum catalytic layer; porous silicon layer; propane-butane mixture; temperature 293 K to 298 K; temperature 40 C; thin film sensor; Conductivity; Gold; Hydrogen; Image sensors; Platinum; Semiconductor thin films; Silicon; Sputtering; Temperature sensors; Thin film sensors; Hydrogen sensor; TiO2-x or ZnO≪A1>; porous silicon; room and 40 $~^circ$C temperatures;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2008.2008406
Filename :
4711321
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