Title :
Design and producibility optimization of single-bias d.c. coupled 10 Gbit/s MMIC transimpedance amplifiers using a GaAs enhancement/depletion PHEMT technology
Author :
Corso, V. ; Bastida, E.M. ; Patiri, V. ; Finardi, C.A.
Author_Institution :
CPqD Res. & Dev. Center, Sao Paulo, Brazil
Abstract :
The design, fully market driven, is described of a d.c. coupled monolithic amplifier for 10 Gbit/s optical communications with 8.7 GHz operational bandwidth, 58 dBΩ transimpedance gain and equivalent input noise current density lower than 6 pA/√Hz. The paper also discusses some important design issues on cost and producibility optimization of the circuit, which makes use of an original mixed inductive and capacitive peaking technique and of an advanced 0.2 μm gate length enhancement-depletion GaAs HEMT technology
Keywords :
DC amplifiers; HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit optimisation; field effect MMIC; gallium arsenide; integrated circuit design; optical receivers; preamplifiers; wideband amplifiers; 0.2 micron; 10 Gbit/s; 8.7 GHz; DC coupled monolithic amplifier; GaAs; GaAs enhancement/depletion PHEMT technology; Gbit/s optical communications; MMIC transimpedance amplifiers; mixed inductive/capacitive peaking technique; producibility optimization; pseudomorphic HEMT technology; single-bias amplifier; Bandwidth; Coupling circuits; Design optimization; Low-noise amplifiers; Operational amplifiers; Optical amplifiers; Optical coupling; Optical design; Optical fiber communication; Semiconductor optical amplifiers;
Conference_Titel :
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-5807-4
DOI :
10.1109/IMOC.1999.867104
