Title :
Thermal Study of the High-Frequency Noise in GaN HEMTs
Author :
Thorsell, Mattias ; Andersson, Kristoffer ; Fagerlind, Martin ; S?¼dow, Mattias ; Nilsson, Per-?…ke ; Rorsman, Niklas
Author_Institution :
GigaHertz Centre, Chalmers Univ. of Technol., Goteborg
Abstract :
The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297-398 K. The access resistances RS and RD have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a 2 times 100 mum GaN HEMT. RS and RD show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; thermal resistance; wide band gap semiconductors; AlGaN-GaN; HEMT; access resistance; high-frequency noise; infrared microscopy; noise model; self-heating effect; temperature 297 K to 398 K; thermal resistance; Gallium nitride (GaN); modeling; noise; temperature measurement; thermal resistance;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Conference_Location :
12/16/2008 12:00:00 AM
DOI :
10.1109/TMTT.2008.2009084
