DocumentCode :
3559961
Title :
Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \\kappa Gate Dielectrics
Author :
Schlosser, Martin ; Bhuwalka, Krishna K. ; Sauter, Martin ; Zilbauer, Thomas ; Sulima, Torsten ; Eisele, Ignaz
Author_Institution :
Inst. of Phys.-Nano & Micro Syst., Univ. of the German Fed. Armed Forces Munich, Neubiberg
Volume :
56
Issue :
1
fYear :
2009
Firstpage :
100
Lastpage :
108
Abstract :
The tunnel field-effect transistor (tunnel FET) is a promising candidate for future CMOS technology. Its device characteristics have been subject to a variety of experimental and theoretical studies. In this paper, we evaluate the influence of using a high-kappa gate dielectric in the tunnel FET compared to a standard silicon oxide with same equivalent oxide thickness, which exhibits a quite different behavior compared to a conventional MOSFET due to its totally different working principle. It turns out that the fringing field effect, while deteriorating conventional MOSFET characteristics, leads to a much higher on-current comparable with actual conventional MOSFETs, a subthreshold slope of the tunnel FET lower than the theoretical limit for conventional MOSFETs, and a massive improved inverter delay, underlining its prospect for future applications. This leads to the conclusion that high-kappa materials with permittivities > 30 can advantageously be used in CMOS technology, giving rise to further technological development.
Keywords :
MOSFET; field effect transistors; permittivity; silicon compounds; MOSFET; SiO2; fringing-induced drain current; high-kappa gate dielectrics; inverter delay; permittivities; silicon oxide; tunnel FET; tunnel field-effect transistor; CMOS technology; Delay effects; Dielectrics; FETs; Helium; Inverters; MOSFET circuits; Permittivity; Silicon; Tunneling; Drain current; high-$kappa$; high-$kappa$; inverter delay; metal–oxide–semiconductor field-effect transistor (MOSFET); metal–oxide–semiconductor field-effect transistor (MOSFET); subthreshold slope; tunnel FET;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
Conference_Location :
12/16/2008 12:00:00 AM
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2008375
Filename :
4717287
Link To Document :
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