A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

Author

Lee, Yao-Jen ; Hsueh, Fu-Kuo ; Huang, Shih-Chiang ; Kowalski, Jeff M. ; Kowalski, Jeff E. ; Cheng, Alex T Y ; Koo, Ann ; Luo, Guang-Li ; Wu, Ching-Yi

Author_Institution

Nat. Nano Device Labs., Hsinchu

Volume

30

Issue

2

fYear

2009

Firstpage

123

Lastpage

125

Abstract

High source/drain concentration level, ultrashallow junction, and high-mobility channel are important for the requirements of nanoscale transistors. Microwave processing of semiconductors could offer distinct advantages over conventional RTP systems in some applications, and the anneal temperature is within the range of 300^degC-500^degC. By using a low-temperature microwave anneal, the sheet resistance and boron diffusion in the Si/Ge/Si substrate could be reduced effectively, and the crystalline structure of Si/Ge/Si is not damaged according to the TEM image and the XRD signals.

Keywords

MOSFET; X-ray diffraction; boron; diffusion; elemental semiconductors; germanium; rapid thermal annealing; semiconductor epitaxial layers; semiconductor junctions; silicon; transmission electron microscopy; CMOSFET; Ge:B; Si-Ge-Si; TEM; XRD; crystalline structure; diffusion; high source-drain concentration level; high-mobility channel; low-temperature microwave anneal process; microwave processing; nanoscale transistors; rapid thermal annealing; sheet resistance; temperature 300 C to 500 C; ultrashallow junction; ultrathin epilayer; Ge; low-temperature anneal; microwave anneal; rapid thermal anneal (RTA);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

Conference_Location

12/16/2008 12:00:00 AM

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2009474

Filename

4717299