Title :
Design of monolithic RF power amplifier using bulk BiCMOS process
Author :
Chan, W.C. ; Mok, Philip K T ; Sin, Johnny K O ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
A low-voltage monolithic 900 MHz power amplifier has been fabricated in a commercial 0.8 μm bulk BiCMOS process with an integrated output tuned circuit. The tuned circuit is implemented by a monolithic inductor of 2.6 nH with 54 μm metal width. The output power of the amplifier is 14 dBm
Keywords :
BiCMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; circuit tuning; inductors; 0.8 micron; 54 micron; 900 MHz; bulk BiCMOS process; integrated output tuned circuit; metal width; monolithic RF power amplifier; monolithic inductor; output power; Active inductors; BiCMOS integrated circuits; Costs; Gallium arsenide; Power amplifiers; RLC circuits; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Silicon;
Conference_Titel :
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location :
Las Cruces, NM
Print_ISBN :
0-7803-5491-5
DOI :
10.1109/MWSCAS.1999.867196
