Title :
Statistical design of the four-MOSFET structure
Author :
Tarim, Tuna B. ; Kuntman, H. Hakan ; Ismail, Mohammed
Author_Institution :
Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through contours. Optimization of transistor W and L values are demonstrated. The four-MOSFET structure was fabricated through the MOSIS 2 μm process using MOS transistor Level-3 model parameters. The experimental results are included in the paper
Keywords :
CMOS analogue integrated circuits; VLSI; circuit CAD; circuit optimisation; integrated circuit design; integrated circuit modelling; statistical analysis; 2 micron; CMOS analogue VLSI; Level-3 model parameters; MOSIS; contours; four-MOSFET structure; nonlinearity; offset current; statistical design; transistor value optimization; Circuits; Current measurement; Design engineering; Linearity; Low voltage; MOSFETs; Resistors; Semiconductor device modeling; Transconductors; Very large scale integration;
Conference_Titel :
Circuits and Systems, 1999. 42nd Midwest Symposium on
Conference_Location :
Las Cruces, NM
Print_ISBN :
0-7803-5491-5
DOI :
10.1109/MWSCAS.1999.867199
