DocumentCode :
3560019
Title :
Dependence of Ordering Kinetics of FePt Thin Films on Different Substrates
Author :
Zha, C.L. ; He, S.H. ; Ma, B. ; Zhang, Z.Z. ; Gan, F.X. ; Jin, Q.Y.
Author_Institution :
Dept. of Opt. Sci. & Eng., Fudan Univ., Shanghai
Volume :
44
Issue :
11
fYear :
2008
Firstpage :
3539
Lastpage :
3542
Abstract :
FePt thin films are deposited on SrTiO3, MgO, and a 2 nm-FeOx, underlayer on an Si substrate at room temperature and then annealed at elevated temperatures. Studies of the L10 ordering process in each case show that the ordering temperature for the FePt film on the nonepitaxial Si/FeOx, substrate is ~150degC lower than the epitaxial FePt films deposited on MgO and SrTiO3 substrates. We argue that internal stresses arising from lattice defects and a recrystallizing process as well as thermal strain from differences in thermal expansion between substrate and film are responsible for the differences in ordering kinetics from the A1 to L10 phase of FePt on the various substrates.
Keywords :
annealing; crystal defects; crystal orientation; epitaxial growth; iron alloys; magnesium compounds; recrystallisation; silicon; strontium compounds; thermal expansion; thin films; FeO; FePt; L10 ordering process; MgO; Si; SrTiO3; annealing; deposition; lattice defects; ordering kinetics; ordering temperature; recrystallization; silicon substrate; substrates effect; thermal expansion; thermal strain; thin films; Epitaxial growth; FePt; nonepitaxial growth; ordering kinetics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2008.2001609
Filename :
4717351
Link To Document :
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