Pulsewidth Dependence of Barrier Breakdown in MgO Magnetic Tunnel Junctions

Dependence of time-dependent dielectric breakdown with pulsewidth was investigated on MgO magnetic tunnel junctions. Barrier breakdown measurements were performed using different pulsewidths, from 10 ns up 1 s. The equivalence of the breakdown results between DC and pulsed voltage experiments was established using the total cumulated pulse time under electrical stress as the relevant parameter. Two different breakdown regimes were identified: the first one corresponding to pulses longer than 100 ns up to the DC limit and a second regime for pulses shorter than 100 ns. The barrier lifetime is increased for pulsewidths lower than 100 ns pulses. The breakdown process was shown to be thermally activated, but the longer lifetime at shorter pulses cannot be simply explained assuming a lower temperature during the pulse application.