Spin Transport in a Double Magnetic Tunnel Junction Quantum Dot System With Noncollinear Magnetization

Author

Ma, Min Jie ; Jalil, Mansoor Bin Adul ; Tan, Seng Ghee ; Han, Gu Chang

Author_Institution

Electron. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore

Volume

44

Issue

11

fYear

2008

Firstpage

2604

Lastpage

2607

Abstract

A model is proposed to study the spin dependent transport of a quantum dot coupled to two noncollinear ferromagnetic leads configuration, in the sequential tunneling regime. The angular deviation (thetas) and lead polarization (p) dependence of the tunneling current and tunneling magnetoresistance (TMR) are investigated for both singly occupied and doubly occupied dot, in the presence of spin flip effect. The current and TMR are found to be more sensitive to p and the spin flip rate in the singly-occupied bias regime.

Keywords

ferromagnetic materials; magnetic tunnelling; magnetisation; quantum dots; spin polarised transport; tunnelling magnetoresistance; angular deviation; double magnetic tunnel junction quantum dot system; ferromagnetic leads; noncollinear magnetization; polarization dependence; sequential tunneling regime; singly-occupied bias regime; spin dependent transport; spin flip effect; tunneling current; tunneling magnetoresistance; Magnetic tunnel junction; quantum dot; spin flip; tunnel magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2008.2002374

Filename

4717581