DocumentCode :
3560230
Title :
Spin Transport in a Double Magnetic Tunnel Junction Quantum Dot System With Noncollinear Magnetization
Author :
Ma, Min Jie ; Jalil, Mansoor Bin Adul ; Tan, Seng Ghee ; Han, Gu Chang
Author_Institution :
Electron. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore
Volume :
44
Issue :
11
fYear :
2008
Firstpage :
2604
Lastpage :
2607
Abstract :
A model is proposed to study the spin dependent transport of a quantum dot coupled to two noncollinear ferromagnetic leads configuration, in the sequential tunneling regime. The angular deviation (thetas) and lead polarization (p) dependence of the tunneling current and tunneling magnetoresistance (TMR) are investigated for both singly occupied and doubly occupied dot, in the presence of spin flip effect. The current and TMR are found to be more sensitive to p and the spin flip rate in the singly-occupied bias regime.
Keywords :
ferromagnetic materials; magnetic tunnelling; magnetisation; quantum dots; spin polarised transport; tunnelling magnetoresistance; angular deviation; double magnetic tunnel junction quantum dot system; ferromagnetic leads; noncollinear magnetization; polarization dependence; sequential tunneling regime; singly-occupied bias regime; spin dependent transport; spin flip effect; tunneling current; tunneling magnetoresistance; Magnetic tunnel junction; quantum dot; spin flip; tunnel magnetoresistance;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2008.2002374
Filename :
4717581
Link To Document :
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