DocumentCode
3560249
Title
Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1 
-FePt Electrodes
Author
Yoshikawa, Masatoshi ; Kitagawa, Eiji ; Nagase, Toshihiko ; Daibou, Tadaomi ; Nagamine, Makoto ; Nishiyama, Katsuya ; Kishi, Tatsuya ; Yoda, Hiroaki
Author_Institution
Corp. R&D Center, Toshiba Corp., Kawasaki
Volume
44
Issue
11
fYear
2008
Firstpage
2573
Lastpage
2576
Abstract
Perpendicular L10-FePt/MgO/Fe/L10 -FePt magnetic tunnel junction (MTJ) films with the (001) texture were successfully developed to obtain a large tunnel magnetoresistance (TMR) above 100 % at room temperature. The TMR ratio in the L10-FePt/MgO/Fe/L10-FePt MTJ was strongly dependent on the Fe interfacial layer thickness. The lattice mismatch between the MgO(001) barrier layer and the L10 -FePt(001) layer is too large for the MgO barrier layer to grow epitaxially on the L10-FePt(001) layer. The insertion of the Fe interfacial layer improves the quality of the MgO(001) barrier layer and achieves an epitaxy in the L10-FePt/MgO/Fe/L10-FePt stack. As a result, the optimization of the Fe interfacial layer thickness is a key to obtain the large TMR ratio in the MgO-based MTJ with the L10-FePt electrodes.
Keywords
electrodes; iron; iron alloys; magnesium compounds; magnetic epitaxial layers; magnetic multilayers; perpendicular magnetic anisotropy; platinum alloys; texture; tunnelling magnetoresistance; FePt-MgO-Fe-FePt; MTJ films; barrier layer; interfacial layer thickness; magnetic tunnel junction films; perpendicular magnetic anisotropy; perpendicular magnetic electrodes; temperature 293 K to 298 K; texture; tunnel magnetoresistance; Interfacial layer; L1$_{0}$
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2008.2003059
Filename
4717605
Link To Document