Title :
Monolithic integration of GaAs MESFET and InP/InGaAsP 2*2 optical switch
Author :
Pollentier, I. ; Buydens, L. ; Demeester, Piet ; Van Daele, Peter ; Enard, A. ; Lallier, Eric ; Glastre, Genevieve ; Rondi, D.
Author_Institution :
Lab. of Electromagn. & Acoust., Gent Univ., Belgium
Abstract :
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2*2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical switches; optical waveguides; 1 V; GaAs; GaAs-InP-InGaAsP; MESFET; OEIC; buried waveguide; heteroepitaxial GaAs-on-InP growth; monolithic integration; optical switch; optoelectronic integrated circuit; photolithographical interconnection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911448
