DocumentCode
3560479
Title
Monolithic integration of GaAs MESFET and InP/InGaAsP 2*2 optical switch
Author
Pollentier, I. ; Buydens, L. ; Demeester, Piet ; Van Daele, Peter ; Enard, A. ; Lallier, Eric ; Glastre, Genevieve ; Rondi, D.
Author_Institution
Lab. of Electromagn. & Acoust., Gent Univ., Belgium
Volume
27
Issue
25
fYear
1991
Firstpage
2339
Lastpage
2340
Abstract
An optical switching OEIC (optoelectronic integrated circuit), consisting of a GaAs MESFET and an InP/InGaAsP 2*2 buried waveguide optical switch, is reported for the first time. Fully monolithic integration is obtained by heteroepitaxial GaAs-on-InP growth and photolithographical interconnection. The combined OEIC allows switching voltages of about 1 V with an extinction ratio of -6 dB.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical switches; optical waveguides; 1 V; GaAs; GaAs-InP-InGaAsP; MESFET; OEIC; buried waveguide; heteroepitaxial GaAs-on-InP growth; monolithic integration; optical switch; optoelectronic integrated circuit; photolithographical interconnection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911448
Filename
121323
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