Title :
Rectifying effects on TiPtAu/p-InGaAsP contacts induced by plasma processes
Author :
Audino, R. ; Autore, G. ; Dovio, D. ; Piccirillo, A.
Author_Institution :
CSELT, Torino, Italy
Abstract :
TiPtAu/p-InGaAsP ohmic contacts for laser devices show nonohmic behaviour which is attributed to damage induced by plasma processes during fabrication. Surface recovering by chemical etching of the top few tenths of a nanometre enables ohmic contacts to be obtained. These results were confirmed using SPICE simulations.
Keywords :
III-V semiconductors; Schottky effect; etching; gallium arsenide; gallium compounds; gold alloys; indium compounds; ohmic contacts; plasma CVD coatings; platinum alloys; semiconductor-metal boundaries; titanium alloys; PECVD; RIE; SPICE simulations; TiPtAu-InGaAsP; chemical etching; fabrication damage; laser devices; nonohmic behaviour; ohmic contacts; plasma induced CVD; plasma processes; rectifying effects; semiconductor lasers; surface-recovering; unwanted Schottky barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911461
