Title :
Excitonic absorption in InGaP/GaAs multiquantum wells
Author :
Patrizi, Gary A. ; Lee, H.Y. ; Hafich, M.J. ; Silvestre, P. ; Robinson, G.Y.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Multiquantum well p-i-n photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.
Keywords :
III-V semiconductors; electroabsorption; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; photodiodes; semiconductor quantum wells; 860 nm; InGaP-GaAs; MQW; PIN diodes; excitonic absorption; gas-source MBE; multiquantum wells; p-i-n photodiodes; room temperature photocurrent spectrum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911464
