Title :
Raman-Assisted Wavelength Conversion in Chalcogenide Waveguides
Author :
Huang, Ying ; Shum, Perry Ping ; Luan, Feng ; Tang, Ming
Author_Institution :
Network Technol. Res. Centre, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We propose and theoretically investigate chalcogenide waveguide as a more energy-efficient platform than silicon waveguide for coherent anti-Stokes Raman scattering (CARS)-based wavelength conversion. 5.5-dB Stokes to anti-Stokes conversion efficiency is observed in an As2Se3 waveguide Raman wavelength converter, which is more than 10 dB higher than its silicon counterpart. Meanwhile, dispersion engineering is discussed for As2Se3 waveguide, in which the normal material dispersion can be solely compensated by waveguide dispersion in the 1550-nm wavelength band. It is found that a nonlinear dynamic phase shift causes significant fluctuation from the perfect phase-matching condition in the As2Se3 waveguide Raman wavelength converter, highlighted by a 20-dB efficiency reduction when the pump power is high. This is due to the comparable Raman and electronic susceptibility in As2Se3 waveguide. In addition, we explore the characteristics of the CARS process in the weak pump regime for the first time according to our knowledge. Such a scheme results in simultaneous anti-Stokes wavelength generation and signal depletion, which is critical for specific applications such as intensity modulation through pulse erasure. Conversion efficiency is much lower in the weak pump region, influenced by both signal and Stokes pump power. Signal depletion ratio up to 78% can be achieved.
Keywords :
arsenic compounds; chalcogenide glasses; coherent antiStokes Raman scattering; optical dispersion; optical phase matching; optical pumping; optical waveguides; optical wavelength conversion; As2Se3; CARS process; CARS-based wavelength conversion; Raman susceptibility; Raman wavelength converter; Raman-assisted wavelength conversion; Stokes pump power; anti-Stokes conversion efficiency; chalcogenide waveguides; coherent anti-Stokes Raman scattering; dispersion engineering; electronic susceptibility; intensity modulation; nonlinear dynamic phase shift; normal material dispersion; perfect phase-matching condition; pulse erasure; signal depletion ratio; simultaneous anti-Stokes wavelength generation; waveguide dispersion; wavelength 1550 nm; weak pump regime; Dispersion; Frequency conversion; Optical waveguides; Photonics; Raman scattering; Silicon; Integrated optics; Raman scattering; nonlinear optics; silicon-on-insulator technology;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Conference_Location :
4/21/2011 12:00:00 AM
DOI :
10.1109/JSTQE.2011.2128856