DocumentCode :
3560575
Title :
Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through
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 thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current <i>I</i>-<i>V</i> characterization. In this letter, we propose a simple and useful technique for separate extraction of <i>RS</i> from <i>RD</i> in a-IGZO TFTs through a two-terminal parallel-mode <i>C</i> -<i>V</i> technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the <i>I</i>-<i>V</i> characteristics.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>amorphous semiconductors; gallium compounds; indium compounds; insulated gate field effect transistors; semiconductor device models; thin film transistors; zinc compounds; C-V characterization; I-V characteristics; InGaZnO; RTOT; a-IGZO thin-film transistors; amorphous indium-gallium-zinc oxide TFT; device degradation; direct-current I-V characterization; insulated gate structure; layout degradation; process degradation; separate extraction; separated source and drain resistances; source-to-drain resistance; total resistance; two-terminal parallel-mode C-V technique; Capacitance; Electrical resistance measurement; Logic gates; Resistance; Thin film transistors; Amorphous; drain resistance; nonlinear model; parameter extraction; parasitic resistance; source resistance; thin–film transistors (TFTs);</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Device Letters, IEEE</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Conference_Location : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>4/21/2011 12:00:00 AM</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0741-3106</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/LED.2011.2127438</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>5753915</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3560575' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3560575</a></div>
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