Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers

Author

Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Ngo, Chun Yong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

Volume

23

Issue

13

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

863

Lastpage

865

Abstract

The characteristic temperature (T₀) and modal gain of 1.3-μm p-doped InAs/GaAs quantum-dot (QD) lasers with different ridge heights (h) have been investigated as a function of injection current under different operation temperatures ranging from 20°C to 120°C. The results show that the geometrical shape of the laser ridge has significant effect on the threshold current density, T₀, and modal gain. The optimum ridge height in the QD laser should be controlled with etch depth where most of the doped layers above the active region are removed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical control; quantum dot lasers; InAs-GaAs; characteristic temperature; doped layers; etch depth; geometrical shape; injection current; laser ridge; modal gain; quantum-dot lasers; ridge heights; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; Gallium arsenide; Measurement by laser beam; Quantum dot lasers; Temperature sensors; Waveguide lasers; Characteristic temperature ($T _{0}$); modal gain; p-doping; quantum dot (QD); ridge height;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

Conference_Location

4/21/2011 12:00:00 AM

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2141126

Filename

5753918