Transparent ZnO Nanowire-Network Ultraviolet Photosensor

Author

Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Tsai, Chi-Nan ; Hong, Jhih-Hong ; Chen, Zong-Syun ; Wu, Cheng-Zhi

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

58

Issue

7

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

2036

Lastpage

2040

Abstract

This paper demonstrates the fabrication of transparent ultraviolet (UV) photosensors with a self-assembling ordered ZnO nanowired network. The average optical transmission of the entire networked photosensor structure in the visible range of the spectrum is about 70%. At an applied bias of 5 V and 340-nm irradiation, the photoresponsivity and the ratio of UV-to-visible rejection was 175.58 and 207.63 A/W for the transparent UV photosensors. For a bandwidth of 100 Hz and an applied bias of 5 V, the noise equivalent power and normalized detectivity of the devices were 2.32 × 10^-10 W and 4.36 × 10⁸ cm · Hz^0.5/W , respectively.

Keywords

II-VI semiconductors; nanofabrication; nanosensors; nanowires; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photosensor; UV-to-visible rejection ratio; ZnO; bandwidth 100 Hz; distance 340 nm; noise equivalent power; optical transmission; photoresponsivity; transparent nanowire-network ultraviolet photosensor; voltage 5 V; Current measurement; Electrical engineering; Fabrication; Materials; Nanoscale devices; Noise; Zinc oxide; Internal gain; ZnO nanowire (NW); photosensivity; photosensor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

Conference_Location

4/21/2011 12:00:00 AM

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2136342

Filename

5753931