Title :
Transparent ZnO Nanowire-Network Ultraviolet Photosensor
Author :
Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Tsai, Chi-Nan ; Hong, Jhih-Hong ; Chen, Zong-Syun ; Wu, Cheng-Zhi
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
This paper demonstrates the fabrication of transparent ultraviolet (UV) photosensors with a self-assembling ordered ZnO nanowired network. The average optical transmission of the entire networked photosensor structure in the visible range of the spectrum is about 70%. At an applied bias of 5 V and 340-nm irradiation, the photoresponsivity and the ratio of UV-to-visible rejection was 175.58 and 207.63 A/W for the transparent UV photosensors. For a bandwidth of 100 Hz and an applied bias of 5 V, the noise equivalent power and normalized detectivity of the devices were 2.32 × 10-10 W and 4.36 × 108 cm · Hz0.5/W , respectively.
Keywords :
II-VI semiconductors; nanofabrication; nanosensors; nanowires; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photosensor; UV-to-visible rejection ratio; ZnO; bandwidth 100 Hz; distance 340 nm; noise equivalent power; optical transmission; photoresponsivity; transparent nanowire-network ultraviolet photosensor; voltage 5 V; Current measurement; Electrical engineering; Fabrication; Materials; Nanoscale devices; Noise; Zinc oxide; Internal gain; ZnO nanowire (NW); photosensivity; photosensor;
Journal_Title :
Electron Devices, IEEE Transactions on
Conference_Location :
4/21/2011 12:00:00 AM
DOI :
10.1109/TED.2011.2136342