Nonlinearities in FET/HEMT microwave devices for circuit synthesis applications

Author

Thomas, D.G. ; Huang, B. ; Branner, G.R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

375

Abstract

Numerous microwave circuits utilize the properties of active elements that operate under large signal conditions. In particular, active frequency conversion circuits employ the nonlinearities resident in microwave transistors such as MESFETs and HEMTs. This paper analyzes the various nonlinear mechanisms possessed by MESFETs and HEMTs with the goal of utilizing these to provide for optimal designs. The major emphasis is placed on the quantitative contribution of each nonlinearity (e.g., I_ds, g_d, C_gs, etc.) to overall harmonic generation. Numerical results are provided utilizing nonlinear simulation software

Keywords

Schottky gate field effect transistors; harmonic generation; high electron mobility transistors; microwave field effect transistors; microwave frequency convertors; network synthesis; FET; HEMT; MESFET; active element; circuit synthesis; computer simulation; design optimization; frequency conversion; harmonic generation; large-signal characteristics; microwave transistor; nonlinearity; Application software; Circuit synthesis; Diodes; Frequency conversion; HEMTs; Intrusion detection; MESFETs; Microwave FETs; Microwave circuits; Microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. 42nd Midwest Symposium on

Conference_Location

Las Cruces, NM

Print_ISBN

0-7803-5491-5

Type

conf

DOI

10.1109/MWSCAS.1999.867284

Filename

867284