DocumentCode :
3560717
Title :
Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications
Author :
Kim, Dae-Hyun ; del Alamo, Jes??s A.
Author_Institution :
Microsyst. Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA
Volume :
57
Issue :
7
fYear :
2010
fDate :
7/1/2010 12:00:00 AM
Firstpage :
1504
Lastpage :
1511
Abstract :
We have experimentally studied the scaling behavior of sub-100-nm InAs high-electron mobility transistors (HEMTs) on InP substrate from the logic operation point of view. These devices have been designed for scalability and combine a thin InAlAs barrier and a thin channel containing a pure InAs subchannel. InAs HEMTs with gate length down to 40 nm exhibit excellent logic figures of merit, such as ION/IOFF = 9 × 104, drain-induced-barrier lowering = 80 mV/V, S = 70 mV/dec, and an estimated logic gate delay of 0.6 ps at VDS = 0.5 V. In addition, we have obtained excellent high-frequency operation with Lg = 40 nm, such as fT = 491 GHz and fmax = 402 GHz at VDS = 0.5 V. In spite of the narrow bandgap of InAs subchannel, under the studied conditions, our devices are shown not to suffer from excessive band-to-band tunneling. When benchmarked against state-of-the-art Si devices, 40-nm InAs HEMTs exhibit ION = 0.6 A/μm at ILeak = 200 nA/μm. This is about two times higher ION than state-of-the-art high-performance 65-nm nMOSFET with comparable physical gate length and ILeak.
Keywords :
high electron mobility transistors; indium compounds; substrates; InAs; InAs HEMT; InP; InP substrate; band-to-band tunneling; drain induced barrier; future logic applications; high-electron mobility transistors; scaling behavior; Delay estimation; HEMTs; Indium compounds; Indium phosphide; Logic devices; Logic gates; MODFETs; Photonic band gap; Scalability; Tunneling; $I_{scriptstyle{rm ON}}/I_{scriptstyle{rm OFF}}$; Drain-induced barrier lowering (DIBL); InAs; gate delay; high-electron mobility transistor (HEMT); logic; scaling; subthreshold swing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
Conference_Location :
6/1/2010 12:00:00 AM
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2049075
Filename :
5475311
Link To Document :
بازگشت