Metal–Oxide RRAM

Author

Wong, H. -S Philip ; Lee, Heng-Yuan ; Yu, Shimeng ; Chen, Yu-Sheng ; Wu, Yi ; Chen, Pang-Shiu ; Lee, Byoungil ; Chen, Frederick T. ; Tsai, Ming-Jinn

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

Volume

100

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1951

Lastpage

1970

Abstract

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Keywords

random-access storage; binary metal-oxide resistive switching RRAM; binary metal-oxide resistive switching random access memory; large-scale RRAM arrays; metal-oxide RRAM; nonvolatile memory application; Electrodes; Electron traps; Hafnium compounds; Nonvolatile memory; Random access memory; Resistance; Solid state circuits; Emerging memory; OxRAM; ReRAM; metal oxide; multibit memory; nonvolatile memory; resistance change memory; resistive switching memory; resistive switching random access memory (RRAM); solid-state memory;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

Conference_Location

5/2/2012 12:00:00 AM

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2012.2190369

Filename

6193402