Title :
Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model
Author :
Kang, In Man ; Shin, Hae-Young
Author_Institution :
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130 nm RF CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; PSP model; RF CMOS technology; RF MOSFET; Y-parameter analysis; cross-type substrate resistance; extraction method; radio-frequency MOSFET; size 130 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0763
