• DocumentCode
    3560881
  • Title

    Temperature independent current biasing employing TFET

  • Author

    Guo, P.F. ; Yang, Yi ; Samudra, G. ; Heng, Chun Huat ; Yeo, Y.C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • Volume
    46
  • Issue
    11
  • fYear
    2010
  • Firstpage
    786
  • Lastpage
    787
  • Abstract
    A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing.
  • Keywords
    field effect transistors; thermal analysis; TFET drain current temperature coefficient; temperature behaviour; temperature independent current biasing; tunnelling field-effect transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1064
  • Filename
    5479719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3560881