Title :
Temperature independent current biasing employing TFET
Author :
Guo, P.F. ; Yang, Yi ; Samudra, G. ; Heng, Chun Huat ; Yeo, Y.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing.
Keywords :
field effect transistors; thermal analysis; TFET drain current temperature coefficient; temperature behaviour; temperature independent current biasing; tunnelling field-effect transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1064
