DocumentCode
3560883
Title
InSbN based p-n junctions for infrared photodetection
Author
Chen, X.Z. ; Zhang, D.H. ; Liu, Wenxin ; Wang, Yannan ; Li, J.H. ; Wee, A.T.S. ; Ramam, A.
Author_Institution
Dept. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
46
Issue
11
fYear
2010
Firstpage
787
Lastpage
788
Abstract
InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k??p model based on In-N bond.
Keywords
III-V semiconductors; antimony alloys; energy gap; indium alloys; infrared detectors; ion implantation; p-n junctions; photodetectors; wide band gap semiconductors; In-N bond; InSb wafers; Mg+ implantation; N+ implantation; alloy bandgaps; detection wavelength; implanted nitrogen monitoring; infrared photodetection; p-n junctions; peak wavelengths; wavelength infrared photodetection;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0713
Filename
5479720
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