Title :
InSbN based p-n junctions for infrared photodetection
Author :
Chen, X.Z. ; Zhang, D.H. ; Liu, Wenxin ; Wang, Yannan ; Li, J.H. ; Wee, A.T.S. ; Ramam, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k??p model based on In-N bond.
Keywords :
III-V semiconductors; antimony alloys; energy gap; indium alloys; infrared detectors; ion implantation; p-n junctions; photodetectors; wide band gap semiconductors; In-N bond; InSb wafers; Mg+ implantation; N+ implantation; alloy bandgaps; detection wavelength; implanted nitrogen monitoring; infrared photodetection; p-n junctions; peak wavelengths; wavelength infrared photodetection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0713
