DocumentCode :
3560956
Title :
Enhancement of Resistive Switching Characteristics in 
-Based RRAM With Embedded Ruthenium Nanocrystals
Author :
Chen, Lin ; Gou, Hong-Yan ; Sun, Qing-Qing ; Zhou, Peng ; Lu, Hong-Liang ; Wang, Peng-Fei ; Ding, Shi-Jin ; Zhang, DavidWei
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Volume :
32
Issue :
6
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
794
Lastpage :
796
Abstract :
Resistive switching behaviors of Al2O3-based memory devices with and without ruthenium nanocrystals (RuNCs) fabricated by atomic layer deposition are investigated for nonvolatile-memory applications. Large resistance ratios (>; 105) of high- to low-resistance states were observed with nanocrystals contribution. Moreover, improvements of stability device yield and retention performance were also achieved by embedding RuNCs. Therefore, the Al2O3-based resistive memory device composed of embedded nanocrystals is a possible solution for future integrated standalone storage class memory processes.
Keywords :
aluminium compounds; atomic layer deposition; random-access storage; resistors; ruthenium; switches; Al2O3; RRAM; Ru; atomic layer deposition; embedded nanocrystals; integrated standalone storage class memory process; nonvolatile memory; resistive memory device; resistive switching characteristic; Aluminum oxide; Atomic layer deposition; Dispersion; Nanocrystals; Nonvolatile memory; Resistance; Switches; $hbox{A}_{2}hbox{O}_{3}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
Conference_Location :
5/5/2011 12:00:00 AM
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2125774
Filename :
5762588
Link To Document :
