On a GaN-Based Light-Emitting Diode With an Indium–Tin–Oxide (ITO) Direct-Ohmic Contact Structure

Author

Liu, Yi-Jung ; Huang, Chien-Chang ; Chen, Tai-You ; Hsu, Chi-Shiang ; Tsai, Tsung-Yuan ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

23

Issue

15

fYear

2011

Firstpage

1037

Lastpage

1039

Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

Keywords

III-V semiconductors; annealing; gallium compounds; gold; indium compounds; light emitting diodes; magnesium; metallic thin films; ohmic contacts; thermal diffusion; tin compounds; wide band gap semiconductors; ITO-Au-GaN:Mg; current spreading capability; direct-Ohmic contact structure; indium-tin-oxide transparent film; interface state; light output power; light-emission area; light-emitting diode; metallic film deposition; thermal annealing; thermal-diffused layer; Annealing; Gallium; Gallium nitride; Gold; Indium tin oxide; Light emitting diodes; Ohmic contacts; GaN; Ohmic contact; indium–tin–oxide (ITO); light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

Conference_Location

5/5/2011 12:00:00 AM

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2150210

Filename

5762591