DocumentCode :
3560978
Title :
Tuning Low-Spin to High-Spin Mn Pairs in 2-D ZnO by Injecting Holes
Author :
Miwa, R.H. ; Schmidt, T.M. ; Fazzio, A.
Author_Institution :
Inst. de Fis., Univ. Fed. de Uberlandia, Uberlandia, Brazil
Volume :
11
Issue :
1
fYear :
2012
Firstpage :
71
Lastpage :
76
Abstract :
We have performed an ab initio theoretical investigation of substitutional Mn atoms in planar structures of ZnO, viz., monolayer [(ZnO)1] and bilayer [(ZnO)2] systems. Due to the 2-D quantum confinement effects, in those Mn-doped (ZnO)1 and (ZnO)2 structures, the antiferromagnetic (AFM) coupling between (nearest neighbor) MnZn impurities have been strengthened when compared with the one in ZnO bulk systems. On the other hand, we find that the magnetic state of these systems can be tuned from AFM to FM by adding holes, which can be supplied by a p-type doping or even photoionization processes. Whereas, upon addition of electrons (n-type doping), the system keeps its AFM configuration.
Keywords :
II-VI semiconductors; ab initio calculations; antiferromagnetic materials; high spin states; monolayers; tuning; wide band gap semiconductors; zinc compounds; AFM configuration; ZnO; ab initio theoretical investigation; antiferromagnetic coupling; bilayer system; bulk system; high-spin pair; injecting hole; low-spin pair; magnetic state; monolayer system; p-type doping; photoionization process; planar structure; quantum confinement effect; tuning; Couplings; Frequency modulation; Geometry; Manganese; Three dimensional displays; Zinc oxide; Nanotechnology; ZnO; spintronics;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
Conference_Location :
5/5/2011 12:00:00 AM
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2011.2150760
Filename :
5762612
Link To Document :
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