DocumentCode :
3561047
Title :
14 MeV Neutrons SEU Cross Sections in Deep Submicron Devices Calculated Using Heavy Ion SEU Cross Sections
Author :
Haran, Avner ; Barak, Joseph ; Weissman, Leo ; David, David ; Keren, Eitan
Author_Institution :
Soreq NRC, Yavne, Israel
Volume :
58
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
848
Lastpage :
854
Abstract :
An analytical model is developed to calculate neutron-induced SEU cross section in deep submicron devices from heavy ion SEU cross section. It is based on the energy spectra of the secondaries of n +Si nuclear reactions which yields the LET distribution of all secondary ions. The integration of this distribution function with the measured heavy ion cross section vs. LET yields the n-SEU cross section. To make the calculations straight forward, the neutron-induced LET distribution is fitted by simple functions. The model is applied to SEU from 14 MeV neutrons and compared with experimental results. Its relevance to proton-induced SEU is discussed.
Keywords :
neutron effects; nuclear reaction theory; radiation hardening (electronics); semiconductor device measurement; LET distribution; deep submicron devices; electron volt energy 14 MeV; energy spectra; heavy ion SEU cross section; neutron-induced SEU cross section; nuclear reactions; secondary ions; Alpha particles; Neutrons; Protons; Random access memory; Silicon; Single event upset; 14 MeV neutrons; SEU in deep submicron devices; neutron-induced SEU; secondary ion spectra;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
Conference_Location :
5/5/2011 12:00:00 AM
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2132803
Filename :
5763731
Link To Document :
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