• DocumentCode
    3561069
  • Title

    A K-Band High-Voltage Four-Way Series-Bias Cascode Power Amplifier in 0.13 \\mu m CMOS

  • Author

    Lee, Jong-Wook ; Kim, Byung-Sung

  • Author_Institution
    Sch. of Electron. & Inf., Kyung Hee Univ., Suwon, South Korea
  • Volume
    20
  • Issue
    7
  • fYear
    2010
  • fDate
    7/1/2010 12:00:00 AM
  • Firstpage
    408
  • Lastpage
    410
  • Abstract
    This letter reports a K-band high-voltage power amplifier delivering 100 mW output power in CMOS technology. The amplifier used series-bias of four cascode power cells to increase operating voltage and achieve high output power. The two-stage series-bias amplifier showed a maximum small-signal gain of 19.5 dB, an output power of 20 dBm, and a PAE of 12.4% at 21 GHz. The results of this study will be useful for realizing a fully integrated single-chip transceiver at microwave and millimeter-wave frequencies.
  • Keywords
    CMOS integrated circuits; MMIC power amplifiers; CMOS technology; K-band high-voltage four-way power amplifier; efficiency 12.4 percent; frequency 21 GHz; gain 19.5 dB; integrated single-chip transceiver; microwave frequency; millimeter-wave frequency; power 100 mW; series-bias cascode power amplifier; size 0.13 mum; two-stage series-bias amplifier; CMOS; K-band; power amplifier; series-bias;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • Conference_Location
    6/7/2010 12:00:00 AM
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2010.2049442
  • Filename
    5481984