Title :
A 305–330+ GHz 2:1 Dynamic Frequency Divider Using InP HBTs
Author :
Seo, Munkyo ; Urteaga, Miguel ; Young, Adam ; Rodwell, Mark
Author_Institution :
Univ. of California, Santa Barbara, CA, USA
Abstract :
This letter presents an inductor-loaded 2:1 regenerative frequency divider operating up to 331.2 GHz in an InP HBT process, which, to the best of authors´ knowledge, is the fastest frequency divider reported thus far. On-wafer measurement shows that the divider is operating from 304.8 GHz to 331.2 GHz, with output power from -27 dBm to -12.3 dBm (no probe loss correction), while dissipating 85.5 mW from -4.1 V and -3.3 V supplies.
Keywords :
III-V semiconductors; frequency dividers; heterojunction bipolar transistors; indium compounds; millimetre wave frequency convertors; InP; dynamic frequency divider; frequency 304.8 GHz to 331.2 GHz; heterojunction bipolar transistors; on-wafer measurement; power 85.5 mW; regenerative frequency divider; voltage -3.3 V to -4.1 V; Dynamic frequency dividers; InP heterojunction bipolar transistors (HBT); regenerative frequency dividers;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Conference_Location :
6/7/2010 12:00:00 AM
DOI :
10.1109/LMWC.2010.2050871
