• DocumentCode
    3561323
  • Title

    A 240-frames/s 2.1-Mpixel CMOS Image Sensor With Column-Shared Cyclic ADCs

  • Author

    Lim, Seunghyun ; Cheon, Jimin ; Chae, Youngcheol ; Jung, Wunki ; Lee, Dong-Hun ; Kwon, Minho ; Yoo, Kwisung ; Ham, Seogheon ; Han, Gunhee

  • Author_Institution
    Samsung Electron., Yongin, South Korea
  • Volume
    46
  • Issue
    9
  • fYear
    2011
  • Firstpage
    2073
  • Lastpage
    2083
  • Abstract
    This paper proposes a low-power 240 frames/s 2.1 M-pixel CMOS image sensor with column-shared cyclic (CY) ADCs. Two-column shared CY-ADC architecture and two-level stacked ADC placement are employed for low-power and small pixel pitch design. The proposed CY-ADC uses only one OTA and four capacitors. Distributed clocking scheme using cascaded repeaters is proposed to reduce the required peak current. The prototype sensor was fabricated in a 0.13- μm 1P4M process with pixel pitch of 2.25 μm . The designed 10-bit ADC dissipates only 90 μW/channel with 1.5 V supply. The measured DNL and INL are +0.59/-0.83 LSB and +2.8/-3.6 LSB, respectively. The measured maximum pixel rate is 500 Mpixels/s with total power consumption of 300 mW.
  • Keywords
    CMOS image sensors; analogue-digital conversion; low-power electronics; 1P4M process; CY-ADC architecture; OTA; capacitors; cascaded repeaters; column-shared cyclic ADC; distributed clocking scheme; low-power CMOS image sensor; power 300 mW; size 0.13 mum; two-level stacked ADC placement; voltage 1.5 V; word length 10 bit; CMOS image sensors; Capacitance; Capacitors; Clocks; Pixel; Power demand; Repeaters; CMOS image sensor; column-parallel ADC; cyclic ADC; single-slope conversion; successive approximation;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • Conference_Location
    5/19/2011 12:00:00 AM
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2011.2144010
  • Filename
    5771069