Effect of Multiple-Transistor Charge Collection on Single-Event Transient Pulse Widths

Author

Ahlbin, Jonathan R. ; Gadlage, Matthew J. ; Atkinson, Nicholas M. ; Narasimham, Balaji ; Bhuva, Bharat L. ; Witulski, Arthur F. ; Holman, W. Timothy ; Eaton, Paul H. ; Massengill, Lloyd W.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

11

Issue

3

fYear

2011

Firstpage

401

Lastpage

406

Abstract

Heavy-ion data from a 130-nm bulk CMOS process shows a counterproductive result in using a common single-event charge collection mitigation technique. Guard bands, which are well contacts that surround individual transistors, can reduce single-event pulsewidths for normal strikes, but increase them for angled strikes. Calibrated 3-D TCAD mixed-mode modeling has identified a multiple-transistor charge collection mechanism that explains the experimental data, namely that angled strikes result in charge collection in the normally ON device that increases the restoring current on the struck device.

Keywords

CMOS analogue integrated circuits; technology CAD (electronics); transistors; 3D TCAD mixed-mode modeling; CMOS process; guard band; heavy-ion data; multiple-transistor charge collection; single-event charge collection mitigation technique; single-event transient pulse width; size 130 nm; Integrated circuit modeling; Inverters; MOSFETs; Semiconductor device modeling; Solid modeling; Charge sharing; pulsewidth; radiation environment; single event; single-event transient (SET); soft error;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

Conference_Location

5/23/2011 12:00:00 AM

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2157506

Filename

5772923