DocumentCode :
3561456
Title :
GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate
Author :
Lai, Wei-Chih ; Yang, Ya-Yu ; Chen, Ying-Hong ; Sheu, Jinn-Kong
Author_Institution :
Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
23
Issue :
17
fYear :
2011
Firstpage :
1207
Lastpage :
1209
Abstract :
We demonstrate GaN-based light-emitting diodes (LEDs) with combined air gap array and patterned sapphire substrates (PSSs). The tapered air gap array was formed on the GaN layer with or without PSS through the enhancement of the lateral growth of GaN. With the combination of air gap array and PSS, we achieved a small reverse leakage current because of the improved quality of the lateral growth-induced crystal. The 20-mA output powers of the LEDs with air gap array, PSS, and the combined air gap array and PSS improved by magnitudes of approximately 30.4%, 54.2%, and 72.9%, respectively, compared with those of conventional LEDs. The present study reveals that the LED with combined air gap array and PSS exhibited a large internal quantum efficiency (IQE) and light extraction efficiency (LEE) enhancements of 9.6% and 43.8%, respectively.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; light sources; Al2O3; GaN; air gap array; internal quantum efficiency; light extraction efficiency; light-emitting diodes; patterned sapphire substrate; Air gaps; Arrays; Gallium nitride; Light emitting diodes; Power generation; Scattering; Substrates; Air gap array; GaN-based light-emitting diodes (LEDs); patterned sapphire substrate (PSS);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
Conference_Location :
6/2/2011 12:00:00 AM
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2158415
Filename :
5783297
Link To Document :
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