A recursive scheme for MESFET nonlinear current coefficient evaluation applied in Volterra-series analysis

Author

Chien-Chang Huang ; Han-Ting Pai

Author_Institution

Dept. of Commun. Eng., Yuan Ze Univ., Taoyuan, Taiwan

Volume

1

fYear

2003

Firstpage

463

Abstract

A recursive scheme for the 2D Taylor-series coefficient evaluation of MESFET drain current characteristics is proposed by using low-frequency harmonic power measurements with the associated phase polarity information. The formulation is in a systematic approach to acquire the general expressions for various order terms. Numerical studies examine the validity of the proposed method with additional measurement uncertainty simulations. Experimental verifications with the two-tone intermodulation distortion of a MESFET amplifier are also shown.

Keywords

MESFET circuits; Schottky gate field effect transistors; Volterra series; equivalent circuits; harmonic analysis; intermodulation distortion; measurement uncertainty; recursive estimation; semiconductor device measurement; semiconductor device models; MESFET 2D Taylor-series coefficient evaluations; MESFET amplifier two-tone intermodulation distortion; MESFET drain current characteristics; MESFET nonlinear current coefficient evaluation; drain current phase polarity information; equivalent circuits; low-frequency harmonic power measurements; measurement uncertainty; recursive Volterra-series analysis schemes; Circuit simulation; Data mining; Equations; Frequency; Intermodulation distortion; MESFETs; Measurement uncertainty; Power measurement; Power system harmonics; Taylor series;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210976

Filename

1210976