DocumentCode
3561596
Title
High density RF MIM capacitors using high-/spl kappa/ AlTaO/sub x/ dielectrics
Author
Huang, C.H. ; Yang, M.Y. ; Chin, A. ; Chunxiang Zhu ; Li, M.F. ; Dim-Lee Kwong
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
1
fYear
2003
Firstpage
507
Abstract
Very high capacitance density of 10 fF//spl mu/m/sup 2/ is measured using high-/spl kappa/ AlTaO/sub x/, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.
Keywords
MIM devices; S-parameters; aluminium compounds; capacitors; dielectric losses; tantalum compounds; 10 kHz to 30 GHz; AlTaO; RF MIM capacitor; S-parameters; VLSI back-end integration; capacitance density; frequency dependence; high-/spl kappa/ AlTaO/sub x/ dielectric; loss tangent; voltage dependence; Capacitance; Circuits; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Radio frequency; Scattering parameters; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210987
Filename
1210987
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