IGCT devices-applications and future opportunities

Within 5 years of its introduction, the integrated gate-commutated thyristor (IGCT) has established itself as the power device of choice at MV levels by offering the lowest costs, the highest reliability and efficiency and the highest power densities. With only 4 or 5 standard housing sizes, it covers a power range of 0.3 to 300 MW. The concept of a “universal PEBB” has come significantly closer thanks to standardised platforms and components (standard wafers, housings, gate units, coolers, clamps etc.). Series-connection is simply achieved and is destined to become simpler still in the foreseeable future. Parallel operation, with its attendant uncertainties, remains unnecessary. The presspack, denigrated in recent years, is once again recognised for its simplicity, reliability, low inductance, inherent standardisation and “modularity”, both for IGCTs and IGBTs and the wisdom of decoupling high-energy DC-links from the switch assembly in VSIs is gaining steady acceptance for both devices