Design and modeling of a high-Q on-chip hairpin inductor for RFIC applications

Author

Wan Ni ; Xiaojuen Yuan ; Tretiakov, Y.V. ; Groves, R. ; Larsona, L.E.

Author_Institution

IBM La Jolla Foundry Application Center, IBM Microelectron., San Diego, La Jolla, CA, USA

Volume

1

fYear

2003

Abstract

The design and modeling of a high Q hairpin inductor is presented. The inductor is designed and fabricated using the thick top-level metal (4um thickness, 14um away from the substrate) in an IBM 0.5um SiGe BiCMOS process to provide very high peak Q, approaching 27 from 2 to 4GHz, specifically for integrated voltage-controlled-oscillator (VCO) applications. A broadband lumped-element model is also developed for this structure. The modeling methodology is verified using commercial field solvers (IE3D and ADS Momentum) and hardware measured data, the results show that the derived model is correlates with the E-M simulation data.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Q-factor; inductors; radiofrequency integrated circuits; semiconductor materials; voltage-controlled oscillators; 0.5 micron; 2 to 4 GHz; ADS Momentum; EM simulation; IE3D; RFIC applications; SiGe; SiGe BiCMOS process; broadband lumped element model; design model; on-chip hairpin inductor; quality factor; voltage controlled oscillator; Active inductors; Computational modeling; Conductors; Dielectric substrates; Frequency; Microelectronics; Phase noise; Q factor; Radiofrequency integrated circuits; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1211027

Filename

1211027