Title :
A SiGe active sub-harmonic 5mA front-end for 5-6 GHz direct-conversion receiver applications
Author :
Svitek, R. ; Raman, S.
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
This paper describes the design and measurement of a fabricated SiGe RF front-end for use in direct-conversion receivers for the Unlicensed National Information Infrastructure (U-NII) bands. The front-end is composed of an LNA, I and Q x2 sub-harmonic mixers (SHMs), and an LO conditioning chain. The receiver is completely differential and is designed for operation from a 3.3 V supply. The current consumption is /spl sim/6 mA for the LNA and /spl sim/5 mA for each mixer. The I/Q mixer pair alone (front-end without LNA) demonstrates /spl sim/8-10 dB gain and an IIP2 of /spl sim/+29 dBm in the lower U-NII bands. Measured receiver performance (with LNA) shows 18-20 dB conversion gain in the lower two U-NII bands, -16 dBm input compression point, and > 10 dB return loss across all three U-NII bands.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; mixers (circuits); radio receivers; radiofrequency integrated circuits; semiconductor materials; 10 dB; 18 to 20 dB; 3.3 V; 5 mA; 5 to 6 GHz; 6 mA; 8 to 10 dB; I/Q mixer; LO conditioning chain; SiGe; SiGe BiCMOS technology; U-NII band; active RF front-end; differential LNA; direct-conversion receiver; sub-harmonic mixer; wireless communication; Circuit topology; Gain measurement; Germanium silicon alloys; Image converters; Loss measurement; Packaging; Performance loss; Radio frequency; Silicon germanium; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1211059
