Title :
Design of 12-channel 120Gb/s laser diode driver array in 0.18µm CMOS technology
Author :
Li Wenyuan ; Sun Chuyang ; Zhao Qianru ; Wu Xiong
Author_Institution :
Inst. of RF-&OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A 12-channel 120Gb/s laser diode driver array has been designed in 0.18μm CMOS technology. Under a supply voltage of 1.8V, simulated results show that a single channel has a speed of 10Gb/s at a power consumption of 98mW. A total capacity of 120 Gb/s can be obtained from 12 channels. With three stages of differential amplifiers directly coupled, the single channel amplifier can supply the current up to 26mA adopting negative feedback and capacitive coupled current amplifier (C3A) structure. The adjustable modulation current from 1mA to 16mA and the bias current up to 10mA can be generated from this driver circuit. The layout area of the driver array is 3205μm×506μm. This design can be used in high speed optical chips.
Keywords :
CMOS integrated circuits; amplifiers; driver circuits; integrated optics; integrated optoelectronics; laser feedback; optical design techniques; semiconductor laser arrays; 12-channel laser diode driver array design; CMOS technology; adjustable modulation current; bias current; bit rate 10 Gbit/s; bit rate 120 Gbit/s; capacitive coupled current amplifier; current 1 mA to 26 mA; driver circuit; high speed optical chips; negative feedback; power 98 mW; power consumption; single channel amplifier; size 0.18 mum; voltage 1.8 V; Arrays; CMOS integrated circuits; Diode lasers; Driver circuits; High-speed optical techniques; Layout; Vertical cavity surface emitting lasers; 12 channels; C3A; active negative feedback; laser diode driver array;
Conference_Titel :
Advanced Technologies for Communications (ATC), 2014 International Conference on
Print_ISBN :
978-1-4799-6955-5
DOI :
10.1109/ATC.2014.7043350
