DocumentCode
3563483
Title
Statistical distributions of electromigration induced failures and their impact on reliability prediction and design
Author
Loupis, M.I. ; Avaritsiotis, J.N.
Author_Institution
Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
Volume
1
fYear
1995
Firstpage
235
Abstract
In electromigration failure studies it is generally assumed that electromigration induced failures may be adequately modelled by a log normal distribution. In order to examine the applicability of the logarithmic distribution of extreme values in electromigration a novel model was created, using an object oriented and fully 2-dimensional electrical and thermal sub-models. The repeated simulations performed showed that the log extreme value distribution is a better statistical model for electromigration failures. The significance of such a modelling is particularly apparent in electromigration failure rate prediction
Keywords
VLSI; electromigration; failure analysis; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; reliability theory; VLSI interconnects; electrical sub-models; electromigration induced failures; failure rate prediction; log extreme value distribution; object oriented models; reliability prediction; thermal sub-models; Conductors; Electromigration; Grain size; Log-normal distribution; Object oriented modeling; Statistical analysis; Statistical distributions; Testing; Thermal resistance; Weibull distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500871
Filename
500871
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