• DocumentCode
    3563483
  • Title

    Statistical distributions of electromigration induced failures and their impact on reliability prediction and design

  • Author

    Loupis, M.I. ; Avaritsiotis, J.N.

  • Author_Institution
    Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece
  • Volume
    1
  • fYear
    1995
  • Firstpage
    235
  • Abstract
    In electromigration failure studies it is generally assumed that electromigration induced failures may be adequately modelled by a log normal distribution. In order to examine the applicability of the logarithmic distribution of extreme values in electromigration a novel model was created, using an object oriented and fully 2-dimensional electrical and thermal sub-models. The repeated simulations performed showed that the log extreme value distribution is a better statistical model for electromigration failures. The significance of such a modelling is particularly apparent in electromigration failure rate prediction
  • Keywords
    VLSI; electromigration; failure analysis; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; reliability theory; VLSI interconnects; electrical sub-models; electromigration induced failures; failure rate prediction; log extreme value distribution; object oriented models; reliability prediction; thermal sub-models; Conductors; Electromigration; Grain size; Log-normal distribution; Object oriented modeling; Statistical analysis; Statistical distributions; Testing; Thermal resistance; Weibull distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500871
  • Filename
    500871