Source unit for characterisation of interface states by means of charge-pumping method

Author

Nowak, B. ; Jakubowski, A. ; GawryE, R. ; Szostak, S.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

Volume

1

fYear

1995

Firstpage

253

Abstract

The aim of this paper is to present a source unit for MOS transistor interface states characterisation using the charge-pumping method. The source constitutes a part of a measurement station whose other components are: a DC ammeter (Keithley M617), a probe station, a PC and appropriate software based on the Windows environment. The source unit allows the experimenter to use either two-level or three-level charge-pumping method. Two-way interface organization (serial: RS-232C and parallel: IEEE488) and built-in voltage sources make it possible to have a compact computer-controlled station

Keywords

MOSFET; characteristics measurement; computerised instrumentation; interface states; MOS transistor characterisation; charge-pumping method; compact computer-controlled station; interface states; measurement station; three-level charge-pumping; two-level charge-pumping; Ammeters; Charge pumps; Communication system control; Current measurement; Interface states; MOSFETs; Measurement units; Programmable logic arrays; Software measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500874

Filename

500874