Title :
Symmetry transitions of compressively prestressed long membranes under pressure
Author :
Paul, O. ; Kramer, T.
Author_Institution :
Inst. for Microsyst. Technol., Freiburg Univ., Germany
Abstract :
This paper reports on the mechanical response of long postbuckled membranes to differential pressure. In the absence of pressure, membranes with Poisson´s ratio /spl nu/=0.25 and prestrain /spl epsiv//sub 0/ more compressive than the critical value -17.3 t/sup 2//a/sup 2/, with the membrane thickness t and width a, show a meander-shaped postbuckling profile. With increasing pressure load, the structures undergo a second-order transition to a ripple-shaped profile at a critical pressure p/sub cr1/(/spl epsiv//sub 0/), and to a ripple-free profile at a higher critical pressure p/sub cr2/(/spl epsiv//sub 0/). At each transition, the structures gain additional symmetries. These phenomena were experimentally studied on micromachined PECVD silicon nitride thin film membranes. A variational calculus approach enabled p/sub cr1/(/spl epsiv//sub 0/), p/sub cr2/(/spl epsiv//sub 0/), /spl epsiv//sub 0,cr2/, and the symmetry contributions to the membrane profiles to be computed. Based on the numerical results, the prestrain and elastic modulus of a PECVD silicon nitride thin film were extracted as /spl epsiv//sub 0/=-1.78/spl times/10/sup -3/ and E=160 GPa, respectively.
Keywords :
CVD coatings; Poisson ratio; buckling; compressibility; membranes; silicon compounds; thin films; 160 GPa; Poisson ratio; SiN; compressively prestressed long membranes; elastic modulus; meander-shaped postbuckling; mechanical properties; micromachined PECVD silicon nitride thin film membranes; postbuckled membranes; symmetry transitions; Biomembranes; Calculus; Capacitive sensors; Laboratories; Mechanical factors; Micromechanical devices; Reflection; Semiconductor thin films; Silicon; Transistors;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215346