Characterization of 2-stage RF power amplifier for FMCW radar application

Author

Munir, Achinad ; Maulana, Yudi Yulius

Author_Institution

Radio Telecommun. & Microwave Lab., ITB, Bandung, Indonesia

fYear

2014

Firstpage

381

Lastpage

384

Abstract

This paper deals with the characterization of 2-stage RF power amplifier numerically and experimentally. The RF power amplifier is designed to work around frequency of 3GHz for frequency-modulated continuous-wave (FMCW) radar application. In the design process, the Agilent Design System (ADS®) software is utilized to determine the value of amplifier parameters such as gain and voltage standing wave ratio (VSWR). The 2-stage power amplifier is realized by use of AT-64020 transistors type, while the impedance matching circuit is implemented using microstrip lines. The Duroid/RT6006 dielectric substrate with the dielectric constant of 6.15 and the thickness of 1.27mm is applied for the implementation. The characterization result shows that VSWRin and VSWRout of realized amplifier are 1.61 and 2.24, respectively, while the gain is 7.13dB which is 3.56dB lower than of the design result.

Keywords

CW radar; FM radar; impedance matching; microstrip lines; radiofrequency power amplifiers; ADS software; AT-64020 transistors type; Duroid/RT6006 dielectric substrate; FMCW radar application; RF power amplifier; VSWR; agilent design system; frequency-modulated continuous-wave radar application; gain 7.13 dB; impedance matching circuit; microstrip lines; size 1.27 mm; voltage standing wave ratio; Microstrip; Radar antennas; Radar applications; Radar signal processing; Radio frequency; Transistors; 2-stage; FMCW radar; RF power amplifier; VSWR; characterization; gain; microstrip lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering and Computer Science (ICEECS), 2014 International Conference on

Print_ISBN

978-1-4799-8477-0

Type

conf

DOI

10.1109/ICEECS.2014.7045282

Filename

7045282