DocumentCode :
3564422
Title :
Vanadium dioxide thin film series single-pole single throw switch
Author :
KuanChang Pan ; Eunsung Shin ; Freeman, Kelvin ; Weisong Wang ; Brown, Dustin ; Subramanyam, Guru
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Dayton, Dayton, OH, USA
fYear :
2014
Firstpage :
1
Lastpage :
4
Abstract :
Vanadium dioxide (VO2) thin films have unique insulator to metal transition above the critical temperature of 72 °C. In this research, VO2 thin films were deposited on a sapphire substrate for thermally controllable RF/microwave switching devices with integrated heating coil. The VO2 thin film based devices showed insulator performance at room temperature and metallic state (low resistive phase) at 80 °C. Switching devices designed using a VO2 series varistor showed good isolation (<; -30 dB) and low insertion loss (> -5 dB) up to 20 GHz.
Keywords :
metal-insulator transition; microwave switches; sapphire; substrates; thin film devices; vanadium compounds; varistors; RF switching device; VO2; critical temperature; insulator performance; insulator-metal transition; integrated heating coil; metallic state; microwave switching device; sapphire substrate; single-pole single throw switch; temperature 80 C; thermally controllable switching device; vanadium dioxide thin film; varistor; Insulators; Optical switches; Substrates; Switching circuits; Temperature measurement; Transmission line measurements; Vanadium dioxide; sapphire; switches; thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace and Electronics Conference, NAECON 2014 - IEEE National
Print_ISBN :
978-1-4799-4690-7
Type :
conf
DOI :
10.1109/NAECON.2014.7045763
Filename :
7045763
Link To Document :
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