Title :
One-directional 3D-SiC MESFET for high power applications
Author :
Thakkallapally, Ramana ; Veesam, Vamshi ; Abdel-Motaleb, Ibrahim ; Zheng Shen
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
A one-directional 3D normally-on SiC MESFET, suitable for safe multi-KW/cm2 power applications, is designed and analyzed using the numerical analysis simulator, Silvaco Atlas. The analyses show that the drain current is a 100% higher than a surface device with the same dimensions, while occupying less than 33% of the area. At gate voltage of 0V, the drain current reaches 600 mA/mm with a breakdown voltage greater than 600V. The proposed vertical structure allows for more efficient heat dissipation and can be easily connected in parallel to provide power of more than 10 kW/cm2.
Keywords :
Schottky gate field effect transistors; numerical analysis; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; MESFET; Silvaco Atlas; breakdown voltage; drain current; numerical analysis simulator; Logic gates; MESFETs; Metals; Silicon; Silicon carbide; Substrates; Threshold voltage;
Conference_Titel :
Aerospace and Electronics Conference, NAECON 2014 - IEEE National
Print_ISBN :
978-1-4799-4690-7
DOI :
10.1109/NAECON.2014.7045766
