Title :
3D SiC/Si normally-off MOSFET for high power high speed applications
Author :
Veesam, Vamshi ; Thakkallapally, Ramana ; Abdel-Motaleb, Ibrahim ; Zheng Shen
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
An optimized power system requires the integration of more than one technology. In this paper we present a 3D 3C-SiC/Si MOSFET, where high performance power devices can be integrated with low cost Si technology. Using the numerical analysis simulator Silvaco Atlas to simulate the device performance, it was found that these devices can provide double the current while occupying less than 33% of the substrate area of a lateral device with the same gate length and width. The device simulation shows that the breakdown voltage can reach 265V and the drain current can reach 0.5 A/mm at Vg =4 V. The stability of this device with temperature makes it an excellent candidate for high power applications.
Keywords :
MOSFET; high-speed integrated circuits; numerical analysis; silicon compounds; three-dimensional integrated circuits; wide band gap semiconductors; 3D high normally-off MOSFET; SiC-Si; breakdown voltage; drain current; gate length; gate width; high performance power devices; high power high speed applications; lateral device; low cost technology; numerical analysis simulator silvaco atlas; power system optimization; substrate area; Logic gates; MOSFET; Metals; Silicon; Silicon carbide; Substrates; Threshold voltage;
Conference_Titel :
Aerospace and Electronics Conference, NAECON 2014 - IEEE National
Print_ISBN :
978-1-4799-4690-7
DOI :
10.1109/NAECON.2014.7045767
