Fabrication and characteristics of the suppressed sidewall injection magnetotransistor using a CMOS process

Author

Song, Youn-Gui ; Ryu, Ji-Goo ; Choi, Young-Shig ; Kim, Nam-Ho

Author_Institution

Dept. of Electron. Eng., Pukyong Nat. Nat. Univ., South Korea

Volume

1

fYear

2005

Firstpage

617

Abstract

We report the implementation of a novel suppressed sidewall injection magnetotransistor. The novel device overcomes the restriction of the standard CMOS technology and achieves high linearity. The fabricated device is designed, based on the Hynix 0.6 μm standard CMOS technology and is experimentally verified. Experimental results show that the change of the collector current is extremely linear as a function of the magnetic induction at I_B=500 μA, V_CE=2 V and V_SE=5 V. The relative sensitivity is up to 120%/T. The nonlinearity of the fabricated device is measured about 1.4%.

Keywords

bipolar transistors; magnetic sensors; microsensors; semiconductor technology; sensitivity; 0.6 micron; 2 V; 5 V; 500 muA; CMOS process; collector current; magnetic field sensor; magnetic induction; relative sensitivity; suppressed sidewall injection magnetotransistor; Bipolar integrated circuits; CMOS process; CMOS technology; Doping; Fabrication; Hall effect; Linearity; MOSFETs; Magnetic field measurement; Magnetic sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on

Print_ISBN

0-7803-8994-8

Type

conf

DOI

10.1109/SENSOR.2005.1496493

Filename

1496493