Title :
Phase-change material for reconfigurability in THz band
Author :
Sanphuang, Varittha ; Ghalichechian, Nima ; Nahar, Niru K. ; Volakis, John L.
Author_Institution :
Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA
Abstract :
We propose phase-change materials (PCMs) to demonstrate the reconfigurablility of THz filter. Here vanadium dioxide (VO2) is studied since it shows insulator-to-metal transition properties at temperature of 70 °C. A broadband ON/OFF filter using frequency selective surfaces (FSS) integrated with VO2 is designed to improve selectivity of THz sensing devices. Simulation and measurement results show an excellent agreement in frequency range of 0.1 - 1 THz. Transmission is centered around 0.55 THz below 70 °C and is cut off when the filter is heated above 70 °C. Therefore, ON/OFF switching in filters is achieved by employing VO2.
Keywords :
frequency selective surfaces; microwave filters; phase change materials; terahertz wave devices; vanadium compounds; THz filter; THz sensing devices; VO2; broadband ON/OFF filter; frequency 0.1 THz to 1 THz; frequency selective surfaces; insulator-to-metal transition properties; phase-change material; temperature 70 C; Band-pass filters; Films; Filtering theory; Frequency selective surfaces; Microwave filters; Phase change materials; Frequency Selective Surface (FSS); Terahertz (THz); filter; metamaterial; phase-change materials (PCMs); sensor;
Conference_Titel :
Aerospace and Electronics Conference, NAECON 2014 - IEEE National
Print_ISBN :
978-1-4799-4690-7
DOI :
10.1109/NAECON.2014.7045827
