Multi-finger MOSFET low noise amplifier performance analysis

Author

Xiaomeng Zhang ; Shuo Li ; Moody, Tylor ; Hao Xue ; Saiyu Ren

Author_Institution

Electr. Eng., Wright State Univ., Dayton, OH, USA

fYear

2014

Firstpage

342

Lastpage

345

Abstract

The Multi-finger layout technique has been extensively used in Nano-scale CMOS circuit design due to the increased circuit performance compared to a single finger layout. However choosing a finger width and number of fingers to optimize circuit performance is a challenging problem. In this paper the performance of a 2.4GHz single ended low noise amplifier (LNA) with a fixed total transistor width in 90nm CMOS technology is analyzed as function of number of fingers (N_f). The results show that the drain to source current (I_ds), transconductance (g_m) and effective gate capacitance (C_geff) increase with increasing N_f. The effect of N_f on transistor cutoff frequency (f_T) and LNA noise figure (NF), voltage gain (AV), center frequency (f_C), and impedance/noise matching is presented.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit design; low noise amplifiers; fixed total transistor; frequency 2.4 GHz; multifinger MOSFET low noise amplifier performance analysis; nano-scale CMOS circuit design; single finger layout; size 90 nm; CMOS integrated circuits; Capacitance; Fingers; Logic gates; Noise; Noise measurement; Transistors; CMOS; LNA; finger width; multiple fingers; process variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, NAECON 2014 - IEEE National

Print_ISBN

978-1-4799-4690-7

Type

conf

DOI

10.1109/NAECON.2014.7045833

Filename

7045833