Title :
Multi-finger MOSFET low noise amplifier performance analysis
Author :
Xiaomeng Zhang ; Shuo Li ; Moody, Tylor ; Hao Xue ; Saiyu Ren
Author_Institution :
Electr. Eng., Wright State Univ., Dayton, OH, USA
Abstract :
The Multi-finger layout technique has been extensively used in Nano-scale CMOS circuit design due to the increased circuit performance compared to a single finger layout. However choosing a finger width and number of fingers to optimize circuit performance is a challenging problem. In this paper the performance of a 2.4GHz single ended low noise amplifier (LNA) with a fixed total transistor width in 90nm CMOS technology is analyzed as function of number of fingers (Nf). The results show that the drain to source current (Ids), transconductance (gm) and effective gate capacitance (Cgeff) increase with increasing Nf. The effect of Nf on transistor cutoff frequency (fT) and LNA noise figure (NF), voltage gain (AV), center frequency (fC), and impedance/noise matching is presented.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; low noise amplifiers; fixed total transistor; frequency 2.4 GHz; multifinger MOSFET low noise amplifier performance analysis; nano-scale CMOS circuit design; single finger layout; size 90 nm; CMOS integrated circuits; Capacitance; Fingers; Logic gates; Noise; Noise measurement; Transistors; CMOS; LNA; finger width; multiple fingers; process variation;
Conference_Titel :
Aerospace and Electronics Conference, NAECON 2014 - IEEE National
Print_ISBN :
978-1-4799-4690-7
DOI :
10.1109/NAECON.2014.7045833
