Title :
Low stress atomic layer deposited alumina for nano electro mechanical systems
Author :
Tripp, Marie K. ; Stampfe, Christoph ; Herrmann, Cari F. ; Hierold, Christofer ; George, Steven ; Bright, Victor M.
Author_Institution :
Colorado Univ., Boulder, CO, USA
Abstract :
A new fabrication process, test structures, and measurements of material properties are presented for atomic layer deposited (ALD) alumina (Al2O3) nanoelectromechanical systems (NEMS). ALD Al2O3 has similar electrical and mechanical properties to silicon nitride (SixNy) and can be used in many of the same applications. Yet ALD Al2O3 is an advantageous material to use over SixNy due to the low deposition temperature, which allows for integration with CMOS processing. Also, ALD Al2O3 has a high chemical resistance to Si etchants. In this work the stress in ALD Al2O3 is measured to be σ=401±32 MPa and σ=445±66 MPa for 100 nm and 50 nm thick Al2O3 films, respectively. The measured Young´s modulus is in the range of 110-120 GPa.
Keywords :
Young´s modulus; alumina; atomic layer deposition; micromechanical devices; nanotechnology; 100 nm; 50 nm; ALD; Al2O3; CMOS processing integration; Young´s modulus; etchant chemical resistance; low deposition temperature; low stress atomic layer deposited alumina; nanoelectromechanical systems; Atomic layer deposition; Atomic measurements; Fabrication; Material properties; Materials testing; Mechanical factors; Mechanical systems; Nanoelectromechanical systems; Stress; System testing;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN :
0-7803-8994-8
DOI :
10.1109/SENSOR.2005.1496551
